Multiple-row concurrent readout scheme for high-speed cmos image sensor with backside illumination

ABSTRACT

A system, method and apparatus implementing a multiple-row concurrent readout scheme for high-speed CMOS image sensor with backside illumination are described herein. In one embodiment, the method of operating an image sensor starts acquiring image data within a color pixel array and the image data from a first set of multiple rows in the color pixel array is then concurrently readout. Concurrently reading out the image data from the first set of multiple rows includes concurrently selecting a first portion of the image data from the first set by first readout circuitry and a second portion of the image data from the first set by second readout circuitry. The first and second portions of the image data from the first set are different and the first and second readout circuitries are also different. Other embodiments are also described.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit pursuant to 35 U.S.C. 119(e) of U.S.Provisional Application No. 61/545,993, filed Oct. 11, 2011, whichapplication is specifically incorporated herein, in its entirety, byreference.

FIELD

An embodiment of the invention relate generally to a system, method andapparatus implementing a multiple-row concurrent readout scheme forhigh-speed CMOS image sensor with backside illumination. Anotherembodiment of the invention relates generally to a system, method andapparatus implementing a high dynamic range sub-sampling architecture.Yet another embodiment of the invention relates generally to a system,method and apparatus implementing an arithmetic counter circuit for highperformance CMOS image sensors.

BACKGROUND

High speed image sensors have been widely used in many applications indifferent fields including the automotive field, the machine visionfield, and the field of professional video photography. The developmentof high speed image sensors is further driven by the consumer market'scontinued demand for high speed slow motion video and normalhigh-definition (HD) video that have a reduced rolling shutter effect.

Complementary metal-oxide semiconductor (“CMOS”) image sensor withbackside illumination is dominant in the high-end CMOS sensor marketbecause it can combine high performance with the mature CMOS imagesensor process for high volume production. The CMOS image sensor withbackside illumination provides the unique advantage of highersensitivity for better low light performance at high speed (i.e., 16.7ms for 60FPS). This advantage makes the CMOS image sensor with backsideillumination desirable for video applications that do not include theflash or strobe light that are available in photo applications. The CMOSimage sensor with backside illumination also provides more flexibilityin the routing on the front-side of the pixel array and a more complexrouting can be implemented for better performance.

Current high speed architecture on CMOS image sensors implement amultiple channels, column parallel architecture, in which the frame rateis limited by the row time which is defined as the time it takes for thesensor to readout one row of pixel in the array. This row timelimitation creates the bottleneck of high speed image sensor design.

Further, many applications require a high dynamic range (HDR) to capturethe scene illuminations ranges from 10⁻¹ for night vision to 10⁵ lux forbright sunlight or direct headlights light condition. This high dynamicrange corresponds to a dynamic range of at least 100 dB. CurrentCharge-coupled devices (CCD) and CMOS sensors cannot achieve this rangedue to the full well limitation and noise floor limitation, which istypically around 60-70 dB. A high dynamic range sensor design is neededto extend the applications of CMOS image sensor into the high dynamicrange areas.

Column parallel Analog-to-Digital (ADC) architecture has been widelyused for its better performance on speed, power and structural noisereduction compared to the global ADC architecture. The column parallelADC in combination with more advanced CMOS technology provides betterpower consumption and area efficiency, while providing more compleximage processing possibilities.

SUMMARY

A system, method and apparatus implementing a multiple-row concurrentreadout scheme for high-speed CMOS image sensor with backsideillumination are described herein. In one embodiment, the method ofoperating an image sensor starts acquiring image data within a colorpixel array and the image data from a first set of multiple rows in thecolor pixel array is then concurrently readout. In this embodiment,concurrently reading out the image data from the first set of multiplerows includes concurrently selecting a first portion of the image datafrom the first set by first readout circuitry and a second portion ofthe image data from the first set by second readout circuitry. In thisembodiment, the first and second portions of the image data from thefirst set are different and the first and second readout circuitries arealso different.

A system, method and apparatus implementing a high dynamic rangesub-sampling (“HDR bin”) architecture are also described herein. In oneembodiment, an image sensor including a pixel array including a firstsuper row having a first integration time and a second super row havinga second integration time is used. The method of implementing a highdynamic range (HDR) bin algorithm in this image sensor starts by readingout an image data from the first super row into a counter. The firstsuper row is a first set of multiple rows of the pixel array. The imagedata from the first super row may then be multiplied by a factor toobtain a multiplied data. The factor is a ratio between the firstintegration time and the second integration time. The multiplied data isthen compared with a predetermined data. In this embodiment, the imagedata from the second super row is readout into the counter. The secondsuper row is a second set of multiple rows of the pixel array. If themultiplied data is larger than the predetermined data, the multiplieddata from the first super row is stored in the counter. However, if themultiplied data is smaller than the predetermined data, the image datafrom the second super row is stored in the counter.

A system and apparatus implementing an arithmetic counter circuit forhigh performance CMOS image sensors are also described herein. In oneembodiment, the arithmetic counter circuit includes a plurality offlip-flops of a plurality of counter stages and a plurality ofmultiplexers of the plurality of counter stages being coupled to theplurality of flip-flops. In this embodiment, each of the plurality ofmultiplexers receive control signals including at least one of a togglesignal, a keep signal, a shift enable signal, and a mode signal. Thecontrol signals select the output of each of the plurality ofmultiplexers. In this embodiment, each of the plurality of flip-flopsare in one of a toggle state, a keep state, a reset state and a setstate based on inputs received from the plurality of multiplexers.

The above summary does not include an exhaustive list of all aspects ofthe present invention. It is contemplated that the invention includesall systems, apparatuses and methods that can be practiced from allsuitable combinations of the various aspects summarized above, as wellas those disclosed in the Detailed Description below and particularlypointed out in the claims filed with the application. Such combinationsmay have particular advantages not specifically recited in the abovesummary.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments of the invention are illustrated by way of example andnot by way of limitation in the figures of the accompanying drawings inwhich like references indicate similar elements. It should be noted thatreferences to “an” or “one” embodiment of the invention in thisdisclosure are not necessarily to the same embodiment, and they mean atleast one. In the drawings:

FIG. 1 illustrates one example of a backside illuminated imaging systemimplementing a multiple row concurrent readout scheme in accordance toone embodiment of the invention.

FIG. 2 illustrates the pixel array configuration in a multiple rowconcurrent readout scheme in accordance to one embodiment of theinvention.

FIG. 3 illustrates a row control timing implementation in accordance toone embodiment of the invention.

FIG. 4 illustrates a row driver configuration in accordance to oneembodiment of the invention.

FIG. 5 illustrates a column multiplexer configuration in accordance toone embodiment of the invention.

FIG. 6A illustrates a timing sequence mode change from 2×2 bin to fullresolution for a conventional sensor.

FIG. 6B illustrates a timing sequence mode change from 2×2 bin to fullresolution for a sensor with a column A/D architecture.

FIG. 6C illustrates a timing sequence mode change from 2×2 bin to fullresolution for one embodiment of the invention.

FIG. 7 illustrates a flowchart illustrating a process for operation ofan image sensor in accordance with one embodiment of the invention.

FIG. 8 illustrates a diagram of an imaging system implementing an HDRbin array configuration in accordance to one embodiment of theinvention.

FIG. 9 illustrates a pixel configuration of the HDR bin array in FIG. 8in accordance to one embodiment of the invention.

FIG. 10 illustrates a diagram of pixel circuitry coupled to columnparallel ADC architecture with top and bottom readout architecture forthe high speed readout in accordance to one embodiment of the invention.

FIG. 11 illustrates a flowchart of an HDR bin algorithm ontwo-integration time configuration in accordance to one embodiment ofthe invention.

FIG. 12 illustrates a diagram of an imaging system implementing an HDRbin array configuration for four-integration time in accordance to oneembodiment of the invention.

FIG. 13 illustrates a pixel configuration of the HDR bin array in FIG.12 in accordance to one embodiment of the invention

FIG. 14 illustrates a flowchart of an HDR bin algorithm with 4integration time in accordance to one embodiment of the invention.

FIG. 15 illustrates a graph of the output response of individualintegration times, t0, t1, t2, and t3, before applying the HDR binalgorithm in accordance to one embodiment of the invention.

FIG. 16 illustrates a final response curve after applying the HDR binalgorithm and the corresponding Signal-to-Noise Ratio (SNR) inaccordance to one embodiment of the invention.

FIG. 17 illustrates final SNR curves for different fraction factors inaccordance to one embodiment of the invention.

FIG. 18 illustrates a first conventional single slope ADC architecture.

FIG. 19 illustrates a second conventional single slope ADC architecture.

FIG. 20 illustrates a first conventional counter configuration with upand down counting.

FIG. 21 illustrates a second conventional counter configuration.

FIG. 22 illustrates a timing diagram showing the holding issue thatarises in the second conventional counter configuration from FIG. 21.

FIG. 23 illustrates a third conventional counter configuration.

FIG. 24 illustrates a timing diagram showing data recovering after datais broken in the third conventional counter configuration from FIG. 23.

FIG. 25 illustrates a diagram of the arithmetic counter according to oneembodiment of the invention.

FIG. 26 illustrates a diagram of the arithmetic counter in counter modeaccording to one embodiment of the invention.

FIG. 27 illustrates a diagram of the arithmetic counter in inversionmode according to one embodiment of the invention.

FIG. 28 illustrates a diagram of the arithmetic counter in shift modeaccording to one embodiment of the invention.

FIG. 29 illustrates a diagram of the arithmetic counter in keep modeaccording to one embodiment of the invention.

FIG. 30 illustrates a timing diagram of the addition operation accordingto one embodiment of the invention.

FIG. 31 illustrates a timing diagram of the subtraction operationaccording to one embodiment of the invention.

FIG. 32 illustrates a timing diagram of the multiplication operationaccording to one embodiment of the invention.

FIG. 33 illustrates a timing diagram of the division operation accordingto one embodiment of the invention.

FIG. 34 illustrates a timing diagram for digital Correlated DoubleSampling (CDS) with up counting according to one embodiment of theinvention.

FIG. 35 illustrates a timing diagram for digital Correlated DoubleSampling (CDS) with down counting according to one embodiment of theinvention.

FIG. 36 illustrates a timing diagram for row summing according to oneembodiment of the invention.

FIG. 37 illustrates a diagram for the arithmetic counter stage withprogrammable initial value according to one embodiment of the invention.

FIG. 38 illustrates a diagram for a latch type first stage schematicaccording to one embodiment of the invention.

FIG. 39 illustrates a timing diagram for a counter with a latch typefirst stage according to one embodiment of the invention.

FIG. 40 illustrates a diagram for a modified latch type first stage withLSB compensation according to one embodiment of the invention.

FIG. 41 illustrates a diagram for a modified latch type first stage withtrue complementary coding according to one embodiment of the invention.

FIG. 42 illustrates a diagram for simplified counter stage according toone embodiment of the invention.

DETAILED DESCRIPTION

In the following description, numerous specific details are set forth.However, it is understood that embodiments of the invention may bepracticed without these specific details. In other instances, well-knowncircuits, structures, and techniques have not been shown to avoidobscuring the understanding of this description.

The following description is the divided into three parts. Part Idescribes a multiple-row concurrent readout scheme for high-speed CMOSimage sensor with backside illumination. Part II describes a highdynamic range sub-sampling architecture. Part III describes anarithmetic counter circuit, configuration and application for highperformance CMOS image sensors.

Part I: A Multiple-Row Concurrent Readout Scheme for High-Speed CMOSImage Sensor with Backside Illumination

In order to improve the frame rate of CMOS image sensors with backsideillumination, the present invention provides a new readout architecturein which multiple rows of pixels are readout at the same time such thatthe row time is significantly reduced.

FIG. 1 illustrates one example a backside illuminated imaging system 100implementing a multiple row concurrent readout scheme in accordance toone embodiment of the invention. In this embodiment, a two-rowconcurrent readout scheme is illustrated but it is understood that twoor more row concurrent read out schemes may be implemented. In theembodiment illustrated in FIG. 1, the two shared pixel which provides ahigher overall performance is used. However, some embodiments of theinvention may implement other pixel structures such as, for example,traditional pixel 4T and 3T. Further, FIG. 1 illustrates a columnparallel architecture with top and bottom readout architecture. However,in some embodiments, other readout architectures (i.e., column serialreadout or multiple channel readout) can be implemented.

As illustrated in FIG. 1, the imaging system 100 includes a color pixelarray 101, top read out circuitry 102 ₁ and bottom readout circuitry 102₂, function logic 111, and control circuitry 112. The pixel array 101 isa two-dimensional (“2D”) array of imaging pixels (e.g., pixels P1, P2, .. . , Pn) having X number of pixel columns and Y number of pixel rows.In one embodiment, each pixel is a complementary metal-oxidesemiconductor (“CMOS”) imaging pixel. Pixel array 101 may be implementedas a backside illuminated image pixel array. As illustrated, each pixelis arranged into a row (e.g., rows R1 to Ry) and a column (e.g., columnC1 to Cx) to acquire image data of a person, place, or object, which canthen be used to render a 2D image of the person, place or object.

Color pixel array 101 may also be referred to as a color filter array(“CFA”). The CFA may capture color image data using a number oftechniques including additive filters and subtractive filters. Forexample, color pixel array 101 may be implemented as a Bayer pattern ormosaic of red, green, and blue additive filters (e.g., RGB, RGBG orGRGB) or a color filter pattern of cyan, magenta, yellow, and key(black) subtractive filters (e.g., CMYK). Other CFAs may also be used,such as a mosaic of red, green, blue, and emerald filters (e.g., RGBE),a color filter pattern of cyan, yellow, green, and magenta filters(e.g., CYGM), a color filter pattern of cyan, magenta, yellow, and whitefilters (e.g., CMYW), a color filter pattern of red, green, blue, andwhite filters (e.g., RGBW), a combination of these, or otherwise.

After each pixel has acquired its image data or image charge, the imagedata is readout by the top and bottom readout circuitry 102 ₁ and 102 ₂via the readout columns 103 ₁ and 103 ₂, respectively. The top andbottom readout circuitries 102 ₁ and 102 ₂ respectively include:multiplexer (“MUX”) circuitry 104 ₁ and 104 ₂, amplification circuitry105 ₁ and 105 ₂ including a plurality of amplifiers, Analog-to-Digitalconverters (“ADCs”) 106 ₁ and 106 ₂, memories cells 107 ₁ and 107 ₂, andglobal amplifiers 110 ₁ and 110 ₂. Both amplification circuitries 105 ₁and 105 ₂ are coupled to the readout columns of color pixel array 110 toreadout the image data on each column via MUX circuitry 104 ₁ and 104 ₂,respectively. In one embodiment, the image data is readout as an analogvoltage level on each readout column. The readout image data is thensequentially provided to ADCs 106 ₁ and 106 ₂, memories 107 ₁ and 107 ₂,and to global amplifiers 110 ₁ and 110 ₂ for amplification. Afteramplification, the readout image data is transferred to the functionlogic 111, which may store the image data or may manipulate the imagedata by applying post image effects (e.g., crop, rotate remove red eye,adjust brightness, adjust contrast or otherwise).

Embodiments of the present invention use MUX circuitry 104 ₁ and 104 ₂to direct the column readout lines (e.g., pixout0 and pixout1 in FIG. 1)to the amplification circuitry 105 ₁ and 105 ₂. As shown in FIG. 1, thecolumn readout lines from two adjacent columns are inputted to twoseparate MUXs: one from the top MUX circuitry 104 ₁ and one from thebottom MUX circuitry 104 ₂. From a functional perspective, MUX circuitry104 ₁ and 104 ₂ may also be considered to include the column readoutlines. In the illustrated embodiment, each of the amplifiers inamplification circuitry 105 ₁ and 105 ₂ reads out the image dataassociated with one column of pixels (and all rows of pixels in theassociated column). As discussed below, in MUX circuitry 104 ₁ and 104₂, the top and bottom MUXes associated with a given column mayconcurrently select alternate readout lines for the same row address(e.g., Row <n>). (See FIG. 5).

Control circuitry 112 is coupled to the pixel array 101 and the MUXcircuitry 104 ₁ and 104 ₂ to control operational characteristics of thepixel array 101 and the MUX circuitry 104 ₁ and 104 ₂. For example,control circuitry 112 may operate as a decoder for configuring MUXcircuitry 104 ₁ and 104 ₂ and a row selector for color pixel array 101.Control circuitry 112 may execute logic for determining whichrows/columns are selected and which amplification circuitry 105 ₁ and105 ₂ are coupled via MUX circuitry 104 ₁ and 104 ₂ at a given time. Thelogic executed may represent executable code (e.g., software orfirmware), hardware logic, or a combination of both. Other functionalityincluded within control circuitry 112 may include generation of resetsignals and shutter signals for controlling image acquisition. In anembodiment, the shutter signal is a rolling shutter signal whereby a setof multiple rows is sequentially enabled during consecutive acquisitionwindows.

In one embodiment, a unit cell 108 includes two shared pixels, which areplaced vertically in FIG. 1. The two shared pixels share the same pixeloutput (i.e., illustrated with a horizontal line in FIG. 1) that may beconnected to one of the two bitlines for each column of pixels. Thesetwo bitlines may also be referred to herein as the column readout lineswhich are illustrated as pixoutO and pixoutl in FIG. 1. In thisembodiment, one unit cell 108 interchangeably connects to a differentbitline than an adjacent unit cell. During the pixel readout, the logicunit cell 109, which is circled with the dotted line, is defined andshifts one pixel from the physical unit cell 108. This avoids that twopixels share the same floating diffusion readout at the same time. Thus,a concurrent readout will not be interrupted since the two pixels withinone logical unit cell 109 have different floating diffusion.Accordingly, two rows of pixels (e.g., Row <n> in FIG. 1) within thesame logical unit cell 109 are able to be readout at the same time.

As illustrated in FIG. 1, to process the data of two rows concurrently(also referred to as a super row, e.g., Row <n> in FIG. 1), each outputof one 4-in-2-out MUX included in the MUX circuitry 104 ₁ and 104 ₂ isinputted into a column amplification stage being amplification circuitry105 ₁ and 105 ₂, a column ADC being an ADC 106 ₁ and 106 ₂, and a memorycell 107 ₁ and 107 ₂. In other words, the column amplification gainstage, column ADC and memory cell is in a pitch of one column to processthe data of two rows concurrently. Other column circuitry such as abitline bias may also be placed in the two-per-pixel pitch. As shown inFIG. 1, each 4-in-2-out analog MUX is placed at the end of the column atthe top and the bottom of the pixel array in the top and bottom readoutcircuitry 102 ₁ and 102 ₂. The function of the MUX is to select theright color pixel signal for the top and bottom readout. For example,G1/G2 may be directed to top readout and B/R may be directed to bottomreadout. Both top and bottom data are readout to the global readout busand can further be merged and processed in the digital block or functionlogic 111.

This embodiment of the invention provides a high speed advantagebecause, at one row address pointer to the super row (e.g., Row <n>),there are two rows of pixels read out at the same time. Accordingly,with regards to the row readout time, the total number of rows in thearrays is halved. Thus, if the row readout time dominates the entire rowtime, then the frame rate improvement may be doubled. Another advantageof this embodiment is the support of true seamless mode transitionbetween full resolution and 2×2 binning. In other words, there will beno resulting bad frames during the transition. Furthermore, therequirement for mode change is kept at minimum with no change on the rowreadout and shutter timing being required. Yet another advantage of thisembodiment is that the color data output sequence may easily berearranged by the digital block because the two-row readout is in a unitof Bayer pattern. As a result, no row digital memory is required.

As discussed above, although the embodiment in FIG. 1 is based on thetwo-row concurrent readout, the embodiment may be expanded include ahigher number of multiple row concurrent readout. In an embodiment thatincludes a higher number of multiple row concurrent readout, more pixoutbuses (e.g., column readout lines) are included. For example, for afour-row concurrent readout, 4 pixout bus per pixel is needed and for aneight-row concurrent readout, 8 pixout bus per pixel is needed, etc. . .. . With front side illumination (FSI) technology, it becomes difficultto have a large number of pixout buses per pixel. With backsideillumination (BSI) technology, more complex routing is allowed at frontside without sacrificing the pixel performance, making the multiple rowconcurrent readout a viable implementation.

Pixel Implementation, Row Driver and Timing

FIG. 2 illustrates one embodiment of the pixel array in a multiple rowconcurrent readout scheme in accordance to one embodiment of theinvention. In the embodiment in FIG. 2, two shared no-row select pixelis used as an example. In another embodiment, other pixel structures andvariations may be used. One logical unit cell 109 (circled in a dottedline) includes two pixels that have the same row decoder address (e.g.,Row <n>) and share the same row driver signal, the same transfer (TX)line as well as the same reset (RST) and set (RS) signals.

In FIG. 2, pixels are arranged in two columns (e.g., columns C1 and C2)and six rows (e.g., rows R1, R2 . . . R6). The illustrated embodiment ofeach pixel circuitry includes a photodiode PD, a transfer transistor T1,a reset transistor T2, and a select transistor T3. During operation,transfer transistor T1 receives a transfer signal TX, which transfersthe charge accumulated in photodiode PD to a floating diffusion node FD.In one embodiment, floating diffusion node FD may be coupled to astorage capacitor for temporarily storing image charges. In the two-rowconcurrent readout embodiment, it takes one readout cycle per two rowsof pixels to readout the entire two rows of data.

As illustrated in FIG. 2, the transfer transistors T1 in the two sharedpixels in logic cell 109 both receive the same transfer signal TX (e.g.TX<n>). Reset transistor T2 is coupled between a set signal RS and thefloating diffusion node FD to reset the pixel (e.g., discharge or chargethe FD and the PD) under control of a reset signal RST and the setsignal RS. The floating diffusion node FD is coupled to control the gateof select transistor T3. Select transistor T3 is coupled between thepower rail VDD and the readout column line. Based on the FD at thecontrol gate of the select transistor T3, select transistor T3selectively couples the output of pixel circuitry to the readout columnline.

In one embodiment, the TX signal, the RST signal, and the RS signal aregenerated by control circuitry 112. FIG. 3 illustrates a row controltiming diagram according to one embodiment of the invention.Specifically, the row control timing diagram in FIG. 3 is a sample rowtiming for the embodiment of the pixel array 101 including the no-rowselect pixel as illustrated in FIG. 2. For other type of pixels, thetiming diagram may be different. As illustrated in FIG. 2, in one logicunit cell 109, the RST and RS transistors (T2 and T3) are different butthe pixels in the logic unit cell 109 share the same TX line.Accordingly, referring to FIG. 3, Row <n> and Row <n+1> are selected andpulsed at the same time for RS and RST signals but only row<n> isselected for TX signal.

FIG. 4 illustrates a row driver configuration in accordance to oneembodiment of the invention. The control logic 112 from FIG. 1 mayinclude the row driver as illustrated in FIG. 4. The row driver mayinclude a plurality of AND gates, OR gates and amplifiers to output theRS, RST and TX signals to the pixel array 101. The row driverillustrated in FIG. 4 has the control timing as illustrated in FIG. 3.

Column Implementation

FIG. 5 illustrates a column multiplexer configuration in accordance toone embodiment of the invention. As shown in FIG. 1, one analog4-in-2-out MUX 104 ₁ is needed per two columns to select the correctcolor pixels to be readout for the top channel and one analog 4-in-2-outMUX 104 ₂ is needed per two columns to select the correct color pixelsto be readout for the bottom channel. For example, green pixels (G1 andG2) may go to the top channel while the blue (B) and red (R) go to thebottom channel. In some embodiments, the last bit of the row address maybe used to generate the correction control logic in order to distinguishthe even and odd row addresses. As discussed above, other columncircuitry, such as bitline bias, colamp amplifier (amplificationcircuitry) 105 ₁ and 105 ₂, column ADC 106 ₁ and 106 ₂ and memory cell106 ₁ and 106 ₂ need to be placed in a two-per-pixel pitch. Further, theinterlaced layout for amplifier and inter-digitized layout forcapacitors may be needed to reduce the green pixels (G1/G2) mismatch.

True Seamless 2×2 Binning

FIG. 6A-C illustrates timing sequences for a mode change from 2×2 bin tofull resolution for a conventional sensor (FIG. 6A), for a sensor with acolumn ADC architecture (FIG. 6B) and for one embodiment of theinvention (FIG. 6C).

A seamless 2×2 binning means that there is no difference in theintegration time when switching between full resolution mode and 2×2binning mode and vice versa. As shown in the timing sequence in FIG. 6Afor the conventional sensor, after changing mode from 2×2 bin to fullresolution, the integration time for four consecutive rows t1, t2, t3and t4 are different. As a result, the conventional sensor generates abad frame that needs to be discarded. Accordingly, the transition forconventional sensors is not seamless. Regarding the sensor with a columnADC architecture, t1, t2, t3 and t4 may be the same, but three keyrequirements are needed in order to realize this seamless mode change:(1) the order of vertical rows is to be changed at the shutter timingjust after the readout timing, (2) shutter pulses and readout pulses areto be controlled independently, and (3) the two modes are to be switchedby setting the serial communication one frame prior to the actual modechange. These requirements add complexity and constraints to the sensorwith the column ADC architecture and as such this sensor does notachieve a perfect seamless mode change implementation.

As shown in FIG. 6C, in one embodiment of the two-row concurrent readoutarchitecture, since two rows of pixels are readout at the same time andthe two rows share the same TX, there is no difference in the timingsequence for both readout phase and shutter phase. As shown in FIG. 6C,TX sequence is the same throughout the entire transition period. Thus,t1 equals t2 and there is no any additional timing control or sequenceis required to achieve this equality in integration time. Accordingly,as opposed to the sensor having the timing sequence shown in FIG. 6B,this embodiment of the present invention achieves a perfect seamlessmode change.

Frame Rate Calculation

Referring to Table 1 and Table 2 below, the frame rate is calculated fordifferent sized pixel arrays. Table 1 presents the frame rate for theconventional readout at full resolution and Table 2 presents the framerate for two row readout according to one embodiment of the invention.

TABLE 1 frame rate calculator for traditional readout at full resolutionArray Size 3 Mpix 5 Mpix 8 Mpix 12 Mpix 16 Mpix Format 4/3 4/3 4/3 4/34/3 Output cols 2000 2580 3270 4000 4620 Output rows 1500 1940 2450 30003460 ADC data (bit) 10 10 10 12 12 Ramp freq (MHz) 200 200 200 200 200Memory freq (MHz) 80 80 80 80 80 Channel # 4 4 4 8 8 (top + btm) Rowreadout time 12.54 12.54 12.54 33.66 33.66 (us) Mem readout time 6.758.56 10.72 6.75 7.72 (us) Row time (us) 12.54 12.54 12.54 33.66 33.66Frame rate (fps) 53.16 41.11 32.55 9.9 8.59

TABLE 2 Frame rate calculator for the proposed 2 row concurrent readoutat full resolution Array Size 3 Mpix 5 Mpix 8 Mpix 12 Mpix 16 MpixFormat 4/3 4/3 4/3 4/3 4/3 Output cols 2000 2580 3270 4000 4620 Outputrows 1500 1940 2450 3000 3460 ADC data (bit) 10 10 10 12 12 Ramp freq(MHz) 200 200 200 200 200 Memory freq (MHz) 80 80 80 80 80 Data path # 44 4 8 8 Row readout time 12.54 12.54 12.54 33.66 33.66 (us) Mem readouttime 13.5 17.13 21.44 13.5 15.44 (us) Row time (us) 13.5 17.13 21.4433.66 33.66 Frame rate (fps) 98.77 60.2 38.08 19.81 17.17 Improvement %85.78% 46.45% 16.99% 100.00% 100.00%

As shown in the Tables 1 and 2, the improvement of the frame rate variesaccording to the digital data path readout speed and bit resolution atfull resolution mode. Further, the embodiment of the present inventiontends to have a higher digital readout speed if the row readout timedominates to the entire row time. Moreover, this speed advantage becomesmore noticeable when using more advanced technology in the road-mapsince digital logic gets more performance boost from the advancedtechnology in terms of increasing processing power and speed compared tothe analog part, making row readout time more dominant.

Therefore, according to some embodiment of the invention, having tworows or multiple rows concurrent readout scheme breaks the bottleneck ofhigh speed image sensor design. Further, this embodiment takes theadvantage of backside illumination technology to provide highersensitivity at low light and more routing flexibility at front-side ofthe sensor. A true seamless 2×2 bin is also achieved using thisarchitecture. Finally, the frame rate advantage of the multiple rowconcurrent readout over conventional readout is shown and further, themultiple row concurrent readout scheme may further gain more speedadvantage with increasing the digital readout speed using more advancedtechnologies.

Operation of the Image Sensor

FIG. 7 is a flow chart illustrating a process 700 for operation of imagesensor 100, in accordance with an embodiment of the invention. The orderin which some or all of the process blocks appear in process 700 shouldnot be deemed limiting. Rather, one of ordinary skill in the art havingthe benefit of the present disclosure will understand that some of theprocess blocks may be executed in a variety of orders not illustrated.

In a process block 701, image data is acquired by color pixel array 101.Prior to readout, this image data is stored internal to each pixel as animage charge, until each pixel is selected to output its image voltageon its associated readout column. In a process block 702, controlcircuitry 112 configures the readout circuitry 102 ₁ and 102 ₂ toconcurrently read out color image data from a current sent of multiplerows. The control circuitry 112 may select which rows of pixels to readout by configuring MUX circuitry 104 ₁ and 104 ₂ and selecting theappropriate pixel row (via the RS, RST and TX signals in FIG. 2). Inorder to output multiple rows at a time, control circuitry 220configures the top and bottom MUX circuitry 104 ₁ and 104 ₂, torespectively select alternate column readout lines. Accordingly, imagedata associated with pixels within two rows of pixels may be readout ofthe color pixel array 110 concurrently. For instance, as discussedabove, in the RGBG Bayer color pixel array 101 in FIG. 1, if Row<n> isthe currently selected row, then one of two groups of color pixels(e.g., green pixels) can be selected by top MUX circuitry 104 ₁ and theother group of color pixels (e.g., blue and red pixels) can be selectedby bottom MUX circuitry 104 ₂ at the same time.

In a process block 703, the image data from the current set of multiplerows is readout on the column lines into amplification circuitry 105 ₁and 105 ₂. As shown in FIG. 1, the image data is then serially providedfrom amplification circuitry 105 ₁ and 105 ₂ to ADCs 106 ₁ and 106 ₂,memories 107 ₁ and 107 ₂, and to global amplifiers 110 ₁ and 110 ₂ foramplification. Finally, in a process block 704, the image data istransferred to the function logic 111.

Process 700 then determines whether the current set of multiple rows isthe last set of multiple rows in the pixel array 101 at Block 705. Ifother sets of multiple rows remain to be readout, the process 700 movesto the next set of multiple rows at Block 706 and repeats process blocks701-704 for the next set of multiple rows. In the case of the pixelarray 101 illustrated in FIG. 1, image data is readout from Row<n> whichincludes two rows of pixels concurrently. Process 700 repeats itselfuntil all Rows (e.g., Row<n+1>, Row<n+2>, etc. . . . ) in the pixelarray 101 have been readout. Once no other sets of multiple rows remainto be readout at Block 705, the image data has been entirely transferredto the function circuitry 111 (Block 707).

Part II: A High Dynamic Range Sub-Sampling Architecture

As discussed above, the column parallel ADC in combination with moreadvanced CMOS technology provides better power consumption and areaefficiency, while providing more complex image processing possibilities.For example, more complex arithmetic processing (i.e., addition,subtraction, multiplication and division) can be implemented in thecounter level, which provides the opportunity to implement the HDR atthe column ADC level.

Two-Integration Time: t0 and t1

FIG. 8 illustrates a diagram of an imaging system implementing an HDRsub-sampling (“HDR bin”) array configuration in accordance to oneembodiment of the invention. The HDR sub-sampling (“HDR bin”) array inFIG. 8 is based on the two-row concurrent readout architecture describedabove. As illustrated in FIG. 8, two rows of pixels, containing a Bayerpattern, are readout at the same time to the column parallel ADC.Compared to the conventional readout method, the two-row concurrentreadout architecture provides the advantage of doubling the readoutspeed and may achieve a true seamless mode change between binning andfull resolution mode. As shown in FIG. 8, the HDR bin can be easilybuilt on the two-row concurrent readout architecture without adding muchof circuitry complexity as further delineated in FIG. 10.

FIG. 9 illustrates a pixel configuration of the HDR bin array in FIG. 8in accordance to one embodiment of the invention. As above, in theembodiment in FIG. 8, the two shared pixel is used. However, someembodiments of the invention may implement other pixel structures suchas, for example, traditional pixel 4T and 3T. Further, FIG. 8illustrates a column parallel architecture with top and bottom readoutarchitecture which provides for high speed readout. However, in someembodiments, other readout architectures can be used to implement theHDR bin.

Similar to FIG. 2, in FIG. 9, pixels are arranged in two columns (e.g.,rows C1 and C2) and six rows (e.g., rows R1, R2 . . . R6). Theillustrated embodiment of each pixel circuitry includes a photodiode PD,a transfer transistor T1, a reset transistor T2, and a select transistorT3. During operation, transfer transistor T1 receives a transfer signalTX, which transfers the charge accumulated in photodiode PD to afloating diffusion node FD.

As illustrated in FIG. 8, the transfer transistors T1 in the two sharedpixels in logic cell 109 both receive the same transfer signal TX (e.g.TX<n>). Reset transistor T2 is coupled between a set signal RS and thefloating diffusion node FD to reset the pixel (e.g., discharge or chargethe FD and the PD) under control of a reset signal RST and the setsignal RS. The floating diffusion node FD is coupled to control the gateof select transistor T3. Select transistor T3 is coupled between thepower rail VDD and the readout column line. Based on the FD at thecontrol gate of the select transistor T3, select transistor T3selectively couples the output of pixel circuitry to the readout columnline.

Two adjacent rows of pixels (or also referred to as one super row 801,e.g., Row<n>) are circled in dashed line in FIGS. 8-9. The one super row801 contains Bayer pattern pixels and shares the same integration time(e.g., t0 or t1). As shown in FIG. 8, the two sets of integration time(t0 and t1) are interlaced throughout the entire pixel array 101. Inthis embodiment, two adjacent super rows 801 (e.g., Row <n> andRow<n+1>) have different integration times. In some embodiments, theratio between t0 and t1 are set as multiples of 2 (i.e., 2, 4 or 8etc.). Given the binning operation with two rows readout at twodifferent row times being performed, this two-integration timeconfiguration only requires one shutter pointer (or pre-charge) in therow driver included in the control logic 112. The image data from thetwo super rows 801 will subsequently be combined to perform the HDRoperation in the column parallel ADC level.

FIG. 10 illustrates a diagram 1000 of pixel circuitry coupled to columnparallel ADC architecture with top and bottom readout architecture forthe high speed readout in accordance to one embodiment of the invention.In order to remain concise, the readout circuitry in FIG. 10 isdescribed as bottom readout circuitry. However, it is understood thatthe top readout circuitry may also implement the following features. Inthis embodiment, the column parallel ADC 1002 is a single slope countertype ADC. However, the other types of column ADC (i.e., SAR, cyclic,etc) may also be used in other embodiments. It is also understood thatthe column parallel ADC architecture may be similar for each column ofthe pixel array. As illustrated in FIG. 10, the readout circuitry withHDR is greatly simplified when compared to the original two-rowconcurrent readout without HDR in FIG. 8.

In FIG. 10, the column parallel ADC 1002 includes amplificationcircuitry 1003, a comparator 1004, a counter 1005 and a memory cell1006. The amplification circuitry 1003 includes a column amplifier withoffset cancellation that is used to provide coarse gain for low noisepurpose. The column amplifier may have a resent switch to cancel theoffset. The comparator 1004 may receive as inputs a ramp signal from aramp generator 1007 and the output of the column amplifier 1003. Theoutput of the comparator 1004 is received by the counter 1005. As shownin FIG. 10, the comparator 1004 may also include a reset switch tocancel its offset. Combined, the offset cancellation of the columnamplifier 1003 and the offset cancellation of the comparator 1004 mayachieve the double Correlated Double Sampling (CDS) function. Thecounter 1005 may also be referred to as an “arithmetic counter” isfurther described below in Part 3. The output data from the counter 1005may be stored in the memory cell 1006 which may be an SRAM. The datastored in the memory cell 1006 may then be read out to the global SRAM1008.

In some embodiments of the invention, HDR bin algorithms may beimplemented using the column parallel ADC 1002 configuration illustratedin FIG. 10. FIG. 11 illustrates a flowchart of an HDR bin algorithm (ormethod 1100) with two-integration time (t0 and t1) configuration inaccordance to one embodiment of the invention. Method 1100 starts withimage data from a first super row 801 (e.g., Row<n>) being readout andstored in the arithmetic counter included in the column parallel ADC1002 (Block 1110). The first super row 801 may be a row having anintegration time of t0. At Block 1020, the image data stored inarithmetic counter then multiplied by the ratio n between integrationtimes t0 and t1 (n=2, 4, 8 . . . ). The multiplication can be performedby the arithmetic counter by using a shift function. At Block 1130, themultiplied data is then compared with the masked data. The masked datamay be ¾ of the saturation level. If the multiplied data is larger thanthe masked data, the method continues to Block 1140 where the arithmeticcounter is set in keep state. In the keep state, the arithmetic counterdiscards the image data obtained in the next read operation. If themultiplied data is smaller than the masked data at Block 1130, then themethod 1100 continues to Block 1150 where the arithmetic counter iscleared, and set to a read state. In the read state, the arithmeticcounter is prepared to store the data obtained in the next readoperation. At Block 1160, the image data from a second super row 801(e.g., Row<n+1>) is readout into the counter. The second super row 801may be a row having an integration time of t1. If the arithmetic counteris set in the keep state at Block 1140, then the image data from thesecond super row 801 is discarded and the image data from the firstsuper row is stored in the arithmetic counter. If the arithmetic counteris set in the read state at Block 1150, the arithmetic counter has beencleared at Block 1150 and the image data from the second super row 801is stored in the arithmetic counter. At Block 1170, the data stored inthe arithmetic counter is output to the memory cell which may be anSRAM.

As illustrated in Method 1100, the HDR bin process requires two rowreadout times to perform one HDR operation and requires the same timingto perform in the row binning mode. Further, the circuit with HDR isgreatly simplified when compared to the original two-row concurrentreadout without HDR.

There are many non-ideal factors could affect the uniformity when sensorreaches to its saturation level, such as full well variations, channelmismatch, etc. If the saturation level is chosen as the decision point,a very high pixel-wise fixed pattern noise (FPN) could be resulted atthe knee point between the super rows 801 (e.g., Row<n> and Row<n+1>).Accordingly, choosing the masked data to be ¾ of the saturation levelavoids the issue of the saturation variation. It is understood that anyfraction factor (being less than one) can also be chosen.

Some other advantages of this embodiment of the HDR bin architectureincludes: (1) an easy switch back to normal binning mode since no timingchange is required compared to normal binning mode, (2) a true seamlessmode change can be achieved between full resolution mode and HDR binmode without generating a bad frames, (3) fast readout speed inconjunction with two row concurrent readout, and (4) differentintegration time is in a unit of a Bayer pattern, thus saving thedigital memory for the color descrambler.

Four-Integration Time: t0, t1, t2, t3

While the above embodiments illustrate the HDR bin with two differentintegration times (t0 and t1), other embodiments may implement amultiple set of integration time configuration (e.g., four integrationtime) for better Signal-to-Noise Ratio (“SNR”) performance.

FIG. 12 illustrates a diagram of an imaging system implementing an HDRbin array configuration for four-integration time in accordance to oneembodiment of the invention and FIG. 13 illustrates a pixelconfiguration of the HDR bin array in FIG. 12 in accordance to oneembodiment of the invention.

As shown in FIG. 12 and FIG. 13, a unit cell of including four pixels(referred to as one super pixel 1201) is circled in a dashed line. Thesuper pixel 1201, which is in a Bayer pattern, shares one integrationtime. As illustrated in FIG. 12, the four sets of integration time (t0,t1, t2 and t3) are interlaced into the entire array. The super pixels1201 having t0 and t1 integration times are located at a first columnthat includes two columns of pixels (e.g., C1 and C2) in the pixel array101. The super pixels 1201 having t2 and t3 integration times arelocated at a second column that includes two columns of pixels (e.g., C3and C4). In some embodiments, two adjacent super pixels 1201 may alwayshave different integration times. In some embodiments, the ratio betweenintegration times t0, t1, t2 and t3 are set as a multiple of 2 (i.e., 2,4 or 8 etc.).

Similar to FIG. 9, in FIG. 13, pixels are arranged in 4 columns (e.g.,column C1, C2, C3, and C4) and six rows (e.g., rows R1, R2 . . . R6).The illustrated embodiment of each pixel circuitry includes a photodiodePD, a transfer transistor T1, a reset transistor T2, and a selecttransistor T3. However, in contrast to the configuration in FIG. 9, twoseparate transfer (TX) buses (TXA and TXB) in one super row are used inFIG. 13. In this embodiment, the super pixels 1201 having t0 and t1integration times are connected to the TXA bus while the super pixels1201 having t2 and t3 integration times are connected to the TXB bus.Taking super pixel 1201 having t0 integration time as an example, duringoperation, transfer transistor T1 receives a transfer signal TXA, whichtransfers the charge accumulated in photodiode PD to a floatingdiffusion node FD. For example, as illustrated in FIG. 13, the transfertransistors T1 in the four pixels included in the super pixel 1201having t0 integration time all receive the same transfer signal TXA(e.g. TXA<n>). Further, in each pixel in the super pixel 1201, resettransistor T2 is coupled between a set signal RS and the floatingdiffusion node FD to reset the pixel (e.g., discharge or charge the FDand the PD) under control of a reset signal RST and the set signal RS.The floating diffusion node FD is coupled to control the gate of selecttransistor T3. Select transistor T3 is coupled between the power railVDD and the readout column line. Based on the FD at the control gate ofthe select transistor T3, select transistor T3 selectively couples theoutput of pixel circuitry to the readout column line.

Since there are two TX buses (e.g., TXA<n> and TXB<n>) in one rowaddress (e.g., Row<n>), the row driver included in the control circuitry112 is required include two shutter pointers (or pre-charge). These twoshutter pointers may be implemented in the current digital platforms. Inone embodiment, the image data from the four super pixels 1201 havingintegration times t0, t1, t2, and t3 will then be combined to performthe HDR operation in the column parallel ADC level 1002 and global SRAMlevel 1008.

FIG. 14 illustrates a flowchart of an HDR bin algorithm (Method 1400)with four-integration time (t0, t1, t2, and t3) in accordance to oneembodiment of the invention. In contrast to the flowchart 1100 withtwo-integration time in FIG. 11, two parallel processes are performedfor (i) the image data from the super pixels having t0 and t1integration time and (ii) the image data from the super pixels having t2and t3 integration time, respectively, by arithmetic counters andfurther, additional processes are performed in a global SRAM level(illustrated below the dashed line in FIG. 14). As illustrated in FIG.13, super pixels having t0 and t1 integration time are located inseparate columns from the super pixels having t2 and t3 integrationtime. Accordingly, a first arithmetic counter in one column parallel ADCmay process the image data from the super pixels having t0 and t1integration time and a second arithmetic counter in another columnparallel may process the image data from the super pixels having t2 andt3 integration time.

In FIG. 14, method 1400 starts at Blocks 1410 ₁ and 1410 ₂simultaneously where the image data from a first super pixel 1210 havinga t0 integration time is readout and stored in a first arithmeticcounter included in a first column parallel ADC (Block 14100 and theimage data from a third super pixel 1210 having a t2 integration time isreadout and stored in a second arithmetic counter included in the secondcolumn ADC (Block 1410 ₂). At Blocks 1420 ₁ and 1420 ₂, the image datastored in the first arithmetic counter and the second arithmetic counterare multiplied by the ratio between integration times, n (n=2, 4, 8 . .. ), respectively. The multiplication can be performed by the arithmeticcounters by using a shift function. At Blocks 1430 ₁ and 1430 ₂, themultiplied data is then compared with the masked data. The masked datamay be ¾ of the saturation level. If the multiplied data is larger thanthe masked data, the method continues to Blocks 1440 ₁ and 1440 ₂ wherethe first and second arithmetic counters are set in keep state. In thekeep state, the first and second arithmetic counters discards the imagedata obtained in the next read operation. If the multiplied data issmaller than the masked data at Blocks 1430 ₁ and 1430 ₂, then themethod 1400 continues to Blocks 1450 ₁ and 1450 ₂ where the first andsecond arithmetic counters are cleared, and set to a read state. In theread state, the first and second arithmetic counters are prepared tostore the data obtained in the next read operation.

At Block 1460 ₁, the image data from a second super pixel 1210 having at1 integration time is readout. If the first arithmetic counter is setin the keep state at Block 1440 ₁, then the image data from the secondsuper pixel is discarded and the image data from the first super pixelis stored in the first arithmetic counter. If the first arithmeticcounter is set in the read state at Block 1450 ₁, the first arithmeticcounter has been cleared at Block 1450 ₁ and the image data from thesecond super pixel is stored in the first arithmetic counter.

Similarly, at Block 1460 ₂, the image data from a fourth super pixel1210 having a t3 integration time is readout. If the second arithmeticcounter is set in the keep state at Block 1440 ₂, then the image datafrom the fourth super pixel is discarded and the image data from thethird super pixel is stored in the second arithmetic counter. If thesecond arithmetic counter is set in the read state at Block 1450 ₂, thesecond arithmetic counter has been cleared at Block 1450 ₂ and the imagedata from the fourth super pixel is stored in the second arithmeticcounter.

At Blocks 1470 ₁ and 1470 ₂, the data stored in the first and secondalgorithmic counters are output to a first and second memory cell,respectively. The first and second memory cells may be SRAMs. These twoparallel process branches (Blocks 1310 to 1370) are performed at exactthe same time. However, it is understood that their comparison resultsmay be different and their following processes may be deviated as well.

The final data stored in the first and second memory cells in the columnparallel ADCs are read out to the SRAM in the global level. At Block1480, the data from the first arithmetic counter (obtained at Block14700 is multiplied by factor n to the power of 2 (i.e., n²) in the SRAMin the global level. The n value having been set at Block 1420 ₁. Themultiplication may be performed by using a bit shifting function.

At Block 1481, the multiplied data from the first arithmetic counter iscompared to the masked value. In some embodiments, the masked value is ¾of saturation level at integration time t2 multiplied by n. If themultiplied data from the first arithmetic counter is larger than themasked value, the method 1400 proceeds to Block 1482 and the data fromfirst arithmetic counter is selected. Otherwise, the method proceeds toBlock 1483 and the data from the second arithmetic counter is selected.At Block 1484, the data that is selected is output to the digitalinterface.

It is noted that the four integration time embodiment illustrated inFIGS. 12-14 may easily be modified to obtain the two integration timeembodiment illustrated in FIGS. 8-9 by simply tying transfer buses TXAand TXB together. Further, the two and four integration time HDR binembodiments are described above may also be expanded into highermultiple integration times as well as altered into different arrangementof super pixels with different integration times. In one example, superpixels having integration times t0, t1, t2 and t3 may be arranged in thesame row by adding TXC and TXD control signals. In another example, a3×3 super pixel arrangement including three rows (e.g., R1, R2, and R3)and three columns (e.g., C1, C2, and C3) may be implemented with a totalnine different integration times (i.e., t0 to t8).

HDR Response and SNR Discussion

In the following examples, the final output response curve before (FIG.15) and after the HDR bin operation (FIG. 16) are based on exemplarypixel data obtained from a 1.4 um pixel and a four integration timeembodiment. As discussed above, the ratio factor n is multiple of 2(i.e. n=2, 4, 8, etc.) which depends on the desired the dynamic range. Ahigher ratio factor n results in a higher dynamic range. The ratio ofintegration times t0, t1, t2 and t3 used in this example is 2 forsimplicity. Accordingly, the ratios of t0, t1, t2, and t3 are asfollows:

-   -   T0:T1:T2:T3=1:2:4:8

Other pixel facts used in this example are listed in the followingtable:

Sensitivity 800 mV/lux * s Integration time t0 5 ms Integration time t110 ms Integration time t2 20 ms Integration time t3 40 ms Full well 8000e CG 200 μV/e Saturation output 1.6 V ¾ saturation output 1.2 V

FIG. 15 illustrates a graph of the output response of individualintegration times, t0, t1, t2, and t3, before applying the HDR binalgorithm in accordance to one embodiment of the invention. FIG. 16illustrates a final response curve after applying the HDR bin algorithmand the corresponding Signal-to-Noise Ratio (SNR) in accordance to oneembodiment of the invention. As shown in FIG. 15, shorter integrationtime results in a response curve's slope being lower. Although theshortest integration time also gives us the widest light responsespectrum, FIG. 16 shows the Signal-to-Noise Ratio (SNR) at the low lightend to be very poor. Accordingly, a longer integration time in this HDRbin algorithm at the low light end is desired to maximize its SNRperformance. Further, as shown in FIG. 16, the final response curve is astraight line response, which facilitates digital processing such asBack-Light Compensation (BLC) and color demosaicing. Additionally, thefinal equivalent full well is increased from 1.6V (at floating diffusionnode) to 12.8V, which is an 8× improvement. That corresponds to adynamic range improvement of 20 log (12.8/1.6)=18 dB. Equivalently, theoutput bit resolution is increased by 3 bit (for example, from 12 bit to15 bit). This improvement is especially significant for the smallerpixel size having a full well capacity that keeps reducing. Thisembodiment of the HDR bin provides a way to boost the full well capacitywith little cost added to the counter and SRAM.

In FIG. 16, the SNR curve is zigzagged along the edge of the switchingpoint or knee point. Digital processing to smooth the edge of this kneepoint may be performed to reduce the noise at this point. As discussedabove, the fraction factor used as an example is ¾ in order to avoidsaturation non-uniformity. FIG. 17 illustrates final SNR curves fordifferent fraction factors in accordance to one embodiment of theinvention. As mentioned earlier, the different values used for thefraction factors will affect the final SNR curve. FIG. 17 provides acomparison between the SNR curves wherein the fraction factors is 1, ¾and ½. The higher fraction factor tends to result a higher SNR response.The choice of fraction factor is affected by the need to avoidsaturation non-uniformity and circuit complexity to implement desiredfraction factor.

Part III: An Arithmetic Counter Circuit, Configuration and Applicationfor High Performance CMOS Image Sensors

Among different approaches of column ADC architecture, single slope ADCis gaining more popularity because of its simple structure that providesmore advantages on power consumption and area efficiency. However, thespeed obtained when using a single slope ADC is slower than the speedobtained when using other types of ADC (e.g., SAR and cyclic, flash).This speed difference is especially noticeable in higher bit resolutioncases. Nonetheless, the speed in the single slope ADC is sufficient formost of the mainstream imaging still capture or video applications.

FIG. 18 illustrates a first conventional single slope ADC architecture.In this first conventional single slope ADC, a comparator reset switch(comp_rst) is included to perform the auto-zero operation which cancelsthe offset of pixel black level as well as the comparator offset. Sincethis operation is performed in the analog domain, it is often referredto as analog Correlated Double Sampling (CDS). The output of thecomparator is connected to an N bit latch, where N denotes the bitresolution of the ADC. In FIG. 18, a total number of N clock signals areinput from global counter driver. Finally, the latch data is output toSRAM and further to the global sense amplifier and SRAM.

There are several drawbacks to the first conventional single slope ADCfrom FIG. 18. For instance, while the first conventional single slopeADC uses analog CDS to cancel the offset of pixel and comparator, thedelay error of the comparator cannot be canceled. The delay error of thecomparator is defined as the time delay from the crossing point of theinput signal to the switching point of the digital output. The delayerror on the output of the comparator (comp_out) can directly affect thedigitized output code. Since the delay error is determined by the groupdelay of each comparator stages, the delay error varies from column tocolumn and thus, a big column fixed pattern noise (FPN) may result.Further, a total number of N counter clock signals (i.e., clk<0>,clk<1>, . . . clk<n>) which travel the entire column of the pixel arrayare needed. Thus, the design of the first conventional signal slope ADCthat includes the N counter clock signals in combination with thedistributed clock driver requires a significant amount of silicon area.Moreover, another drawback of the first conventional single slope ADC isthe switching noise coupling to other signals.

FIG. 19 illustrates a second conventional single slope ADC architecture.In this second conventional single slope ADC architecture, a second Nbit latch is added to the architecture of FIG. 18. The two individual Nbit latches are used to store the output data from the reset and theoutput data from the signal, respectively. In this architecture, twosteps of ramp signal from the ramp generator are needed to finish theconversion: one step of the ramp signal for the reset level and anotherstep of the ramp signal for the signal level. Since the comparator delayerror is included in both outputs (e.g., reset and signal), the delayerror can be canceled after a subtraction is performed between the twooutputs. In the second conventional single slope ADC architecture, thenoise issue of the counter clock can be elevated by using a gray codetopology on the counter clock.

Although second conventional single slope ADC illustrated in FIG. 19 hasimprovements over the first conventional single slope ADC in FIG. 18,there remains several drawbacks. For instance, (i) the two latchesdouble the required column height, (ii) the counter clocks and theirdistributed drivers consume a significant amount of silicon area, (iii)in order for the two sets of N bit data, reset, and signal, of one rowof the pixel array to be readout within one row time, the readout speedmust be doubled which further increases the consumption of power, and(iv) a subtraction unit as well as a gray-to-binary converter arerequired to reconstruct the final signal, thus the silicon area andpower consumption required are further increased.

FIG. 20 illustrates a first conventional counter configuration with upand down counting. An asynchronous counter is used as a central unit forthe conventional single slope ADC used in CMOS image sensors.Traditional asynchronous counters use the cascade configuration of aplurality of T flip-flops stages as shown in FIG. 20. As illustrated inFIG. 20, each T flip-flop is implemented using a D flip-flop with QBtied to D input. The stage output toggles when it sees a negative (orpositive) edge of the output signal from the previous stage. There isalways a divide by two operations along the counter stages such that acounting operation can be performed. The counter can either perform anup or down counting with QB or Q connected to its following consecutivestage clock input, respectively. Further, a clear signal connects toeach D flip-flop in the counters to reset the D flip-flop outputs tozero at the same time.

FIG. 21 illustrates a second conventional counter configuration. In thiscounter configuration, a switch controlled by a switch signal (SW) isadded between stages to switch the counter between counting mode andinversion mode. In counting mode, the switch connects the B signal tofirst stage flip-flop and the Q signal output to the next stageflip-flop. In inversion mode, all the outputs of the counter stages areinverted. The inversion is obtained by cutting the connection betweenstages and connecting the clock input from a global control signal (I).When all counter stages see the rising edge of the control signal, theiroutput toggles from its original value all at the same time, making thefinal output code an inversion of its original one. However, withoutmodification, this counter cannot be used in the CMOS image sensor,because the output cannot hold the data stored therein when changingbetween counter mode and inversion mode. FIG. 22 illustrates a timingdiagram showing the holding issue that arises in the second conventionalcounter configuration from FIG. 21. When the SW signal is high to selectthe inversion mode, the counter cannot hold the data stored therein(i.e., 6). This issue limits the second conventional counterconfiguration's application in many systems that require a continuousoperation.

FIG. 23 illustrates a third conventional counter configuration. Thisthird conventional counter configuration addresses a code holding issuethat arises when changing the counter mode between up-counting anddown-counting. FIG. 24 illustrates a timing diagram showing datarecovering after data is broken in the third conventional counterconfiguration from FIG. 23. The third conventional counter configurationuses a 2-in-1-out MUX placed after the up/down switch for each stage andswitches between previous switch output and a power connection, Vdd. Thepurpose of this MUX is to recover and correct the error caused by themode switching. However, this third conventional counter configurationdoes not address other operation modes of the counter such asmultiplication, division and other functionalities.

Accordingly, some embodiments of the present invention implements a newcolumn parallel conversion architecture using an arithmetic counter, inwhich arithmetic operations (i.e., addition, subtraction, multiplicationand division) can be performed.

Counter Circuit

FIG. 25 illustrates a diagram of the arithmetic counter according to oneembodiment of the invention. In this embodiment, a plurality of J-Kflip-flops and a plurality of MUX are used. The J-K flip-flop has thecapability of switching between Toggle and Keep state. As shown in thetruth table (Table 1) below, using the J-K flop-flop as a latch, allinput combination may be used to obtain functions such as Keep, Reset,Set, and Toggle.

TABLE 1 Truth Table J K Q(n − 1) Q(n) Function 0 0 0 0 Keep 0 0 1 1 0 10 0 Reset 0 1 1 0 1 0 0 1 Set 1 0 1 1 1 1 0 1 Toggle 1 1 1 0

The logic expression of a J-K flip-flop is:

Q(n)=J*QB(n−1)+KB*Q(n−1)

For example, when inputs J=0 and KB=1, then the J-K flip-flop will holdits previous data: Q(n)=Q(n−1). When inputs J=1 and KB=0, then theflip-flop will toggle from its previous state: Q(n)=QB(n−1).

The J-K flip-flops are used as the basic building unit of the arithmeticcounter in the embodiment illustrated in FIG. 25. As an example and forsimplicity, four bit counter units are used in this embodiment. It isunderstood that other sized counter units may be used.

In contrast to the first conventional counter as illustrated in FIG. 20,in this embodiment, three digital multiplexers (MUX) are added in eachcounter stage. These MUX are used to control the connectivity and thusachieving different functions of the arithmetic counter. Four controlsignals (i.e., toggle, keep, shift_en, mode) are used to control whichinputs are connected to the output in the three digital MUX. In thisembodiment, toggle and keep signals may be two complementary signals andmay be treated like one in the timing control diagram. The MUX can beimplemented using a transmission gate or a AOI (Z=A*X+B*Y) gateconfigurations. Count_clk signal provides a clock signal. A shift_clksignal, which may be different from the count_clk, may also be used toprovide a separate clock control when used in a shift or inversion mode.Comp_in signal is the output from the comparator. Din signal is thedigital input to the first stage during the shift mode.

In some embodiments, the counter from FIG. 25 can be configured intothree different modes: counter mode, inversion mode and shift mode. FIG.26 illustrates a diagram of the arithmetic counter in counter modeaccording to one embodiment of the invention. In FIG. 26, the digitalMUX is replaced with a two-switch symbol to clearly demonstrate theconnectivity. Counter mode is set when mode=0, shift_en=0, and toggle=1.In this configuration, J is connected to “1”, KB is connected to “0”such that, using the logic expression of a J-K flip-flop above,Q(n)=QB(n−1). Thus, a toggle configuration is obtained. Additionally,each stage's clock input is obtained from the previous stage QB output.Referring to FIG. 26, the counter configuration is set in an up countingmode but it can be set in a down counting mode by connecting Q to thenext stage's clock input. A clear signal is to reset all counter stages'output before the start of a new counting operation

FIG. 27 illustrates a diagram of the arithmetic counter in inversionmode according to one embodiment of the invention. Inversion mode isused to invert the output of all stages from its original value. Thearithmetic counter in inversion mode is set when mode=0, shift_en=1 andtoggle=1. In this configuration, similar to the counter mode, eachflip-flop stage is in a toggle configuration. However, each stage'sclock input is connected to a common shift_clk signal. There are noconnection between consecutive stages such that for each negative edgeof shift_clk signal, each flip-flop stage toggles its output once,leading to an inversion operation of the final output code.

FIG. 28 illustrates a diagram of the arithmetic counter in shift modeaccording to one embodiment of the invention. The arithmetic counter inshift mode is set when mode=1 and shift_en=1. In this configuration, Jand KB are connected together and receive the data output from theprevious stage at Q. Thus, in this embodiment, J=KB=D such that, usingthe logic expression of a J-K flip-flop above, Q(n)=D. Accordingly, Dflip-flop configuration is obtained with data input connected to theprevious stage output. Similar to the inversion mode, each stage's clockinput is connected to a common shift_clk signal. In FIG. 28, Din isconnected to the first stage data input. As illustrated in FIG. 28, ashift register configuration is obtained wherein for each negative edgeof shift_clk, each stage's output is shifted to its successive stage.

FIG. 29 illustrates a diagram of the arithmetic counter in keep modeaccording to one embodiment of the invention. The arithmetic counter inkeep mode is obtained when mode=0 and toggle=0 regardless of the inputof the clock. In this configuration, J=0 and KB=1 such that, using thelogic expression of a J-K flip-flop above, Q(n)=Q(n−1). This allows theflip-flop to be set in a keep configuration. Without or with negativeedge seen at the clock input, the arithmetic counter in keep mode willhold this data until the keep mode is canceled or a counter reset isreceived.

Arithmetic Operations

Using the operation modes of the counter described above, all thearithmetic operations can thus be performed using this arithmeticcounter. For example, addition operation is used to add two pulse trainstogether in the counter mode. By not resetting the counter stages whennext pulse train occurs, two pulse trains are added at the final counteroutput. Thus, an A+B operation is performed. FIG. 30 illustrates atiming diagram of the addition operation according to one embodiment ofthe invention. As shown in FIG. 30, an addition operation of 6+6=12 isperformed as an example.

A subtraction operation is to subtract counter value of the second pulsetrain from the first pulse train. The subtraction operation requires twoinversion operations and counter operations. For example, the firstpulse train is counted as A and an inversion operation is performed toinvert all the counters output to obtain (2n−1−A), where n is the numberof counter stages. Then, a second pulse train is counted without resetin between, giving an output of (2^(n)−1−A+B). Finally, anotherinversion operation is performed and the final output thus becomes(A−B). In contrast to the conventional counter illustrated in FIG. 20,the counter keep mode is used to hold the result from previous operationwhenever shift_en signal changes its state. FIG. 31 illustrates a timingdiagram of the subtraction operation according to one embodiment of theinvention. As shown in FIG. 31, during the edge of shift_en signal,toggle signal is always low to set counter in a keep mode. This preventsunwanted state changes during the mode transition. In the example shownin FIG. 31, pulse train A equals to 8 clock pulses, pulse train B equalsto 5 clock pulses. After two inversions, the final output is thesubtraction result (i.e., 8−5=3).

The proposed arithmetic counter also supports multiplication operationsincluding multiplications integer values of 2, 4, 8, etc. . . . Themultiplication operation by 2 (“2× multiplication”) is performed byshifting the counter data from low least significant bit (LSB) stage tohigh LSB stage. Bits higher than the most significant bit (MSB) datawill be discarded and data is inserted to the counter stage0 from Dininput. In one embodiment, a “0” is used as Din and 2× multiplicationoperation is performed at the negative edge of the shift_clk. As aresult, 2× multiplication is performed with one shift_clk pulse.Further, as illustrated in FIG. 31, multiplication operation by 4 (“4×multiplication”) may be obtained with two shift_clk pulses andmultiplication operation by 8 (“8× multiplication”) may be obtained withthree shift_clk pulses, etc. As in the subtraction operation, thecounter keep mode is used when switching between counter mode and shiftmode, in order to hold the data from the previous operation. FIG. 32illustrates a timing diagram of the multiplication operation accordingto one embodiment of the invention. Specifically, FIG. 32 illustratesthe timing diagram for a 2× multiplication. As illustrated in FIG. 32,during the edge of shift_en signal, toggle is always low. In addition,an overlap timing t1 is required between mode and shift_en signal toensure that the counter is set in a keep mode during the modetransition. As an example shown in FIG. 32, the arithmetic countermultiplies 6 by 2 and the final output is 12. Furthermore, to perform a4× multiplication operation, the two shift clock pulses may be used andmay both be enclosed by shift_en signal.

Division operations can also be performed using the shift function.Since in the shift register configuration, data cannot shift inbackwards, the output of the last stage is connected back to the firststage Din as shown in FIG. 28. Thus, a divide by 2 operation can beperformed using a single shift_clk pulse and discarding the last stage'soutput. Further, where n is the number of counter stages, a divide by2^(n) can be performed using n−i shift_clk pulses and discarding thelast i stage's output (replaced with “0”). FIG. 33 illustrates a timingdiagram of the division operation according to one embodiment of theinvention. Specifically, the timing of a divide-by-4 operation is shownin FIG. 33 wherein after two shift_clk pulses and discarding the lasttwo bits, a divide-by-4 operation is performed by the arithmetic counter(e.g., 8/4=2).

The arithmetic counter according to some embodiments of the inventionmay also perform a combination of the operations. To achieve thecombination of the operations requires that each of the operations becascaded in the correct sequence based on the timing of each of thebasic arithmetic operation. For example, if we want to calculate2*(A+B)−4*(C+2D), the correct sequence of operation may be rearranged to2*(−2*(2*D+C)+A+B). In accordance with some embodiments, the basic ruleis to extract the multiplier to the front and move the addition to theend. In this way, all the combination of arithmetic operations can beperformed.

Configurations and Application in CMOS Image Sensor

Referring back to FIG. 10, the diagram 1000 of pixel circuitry coupledto column parallel ADC architecture for high performance CMOS imagesensor in accordance to one embodiment of the invention is illustrated.In this embodiment, the column parallel ADC 1002 is a single slopecounter type ADC architecture which may include the arithmetic counterfrom FIG. 25 as the counter 1005. This single slope counter type ADCincluding the arithmetic counter may be built into a CMOS image sensorto achieve a high performance and increased functionalities.

In contrast to the conventional configurations in FIG. 18 and FIG. 19,the amplification circuitry 1003 with close loop and auto-zeroingconfiguration may be used to provide a pre-gain for the low noisepurpose in FIG. 10. According to other embodiments, the columnamplification circuitry 1003 can be excluded to save power and columnheight.

The auto-zeroing operation on amplification circuitry 1003 andcomparator 1004 stores the offset for the amplification circuitry 1003and the comparator 1004 as well as the black level of the pixel forlater cancellation. A proper timing sequence on their auto-zeroing isneeded to ensure no charge injection error is included from theswitching operation.

As shown in FIG. 10, the arithmetic counter 1005 from FIG. 25 isincluded after the comparator 1004 output. In contrast to theconventional configurations in FIG. 18 and FIG. 19, only one clocksignal count_clk is needed which saves routing space and reduces thenoise coupling issue.

FIG. 34 illustrates a timing diagram for digital Correlated DoubleSampling (CDS) with up counting according to one embodiment of theinvention. In order to cancel all the offsets from previous stages aswell as to cancel the delay error of the comparator, a digital CDSoperation is performed. In some embodiments of the invention, thedigital CDS is built into the arithmetic counter. In some embodiments,to perform digital CDS, a subtraction operation of the arithmeticcounter is utilized.

The control timing and resulting signals for digital CDS with upcounting are shown in FIG. 34. Firstly, the falling edge of the pixelreset, the timing for the reset signal for the column amplificationcircuitry 1003 (colamp_rst) and the reset signal for the comparator 1004(comp_rst) are overlapping, the colamp_rst enclosures pixel reset andcomp_rst enclosures colamp_rst. As illustrated in FIG. 34, time t1 andt2 ensures the settling of column amplification circuitry 1003 andcomparator 1004, respectively. These times further ensure that no changeinjection disturbance caused by the previous stages auto-zeroing phaseis inputted into the next stage. The signal increases its value at theoutput of the amplification circuitry 1003 (colamp_out node) whenreading out the reset and signal level. As a result, an upward-goingramp is preferred for the comparison operation. After the comparatorstage, the reset level and signal level are converted to two pulses, inwhich their pulse width represents the strength of the signal level.After gated with count_clk, the signal is converted two pulse trains,one represents the signal level and one represents the reset level.

The digital CDS is obtained by performing the subtraction operationbetween two pulse trains. In order to get the positive number after theCDS (e.g., signal level is higher or not smaller than the reset level)the inversion sequence timing needs to be carefully placed (i) beforethe reset phase and (ii) between the reset and signal phase as shown inFIG. 34.

The following set of equations can be used to prove the validity the CDSoperation:

Timing Dout At t4 (first inverse) Dout = 2^(n) − 1 − Doffset At t6 Dout= 2^(n) − 1 − Doffset + Drst At t7 (second inverse) Dout = 2n − 1 − (2n− 1 − Doffset + Drst) = Doffset − Drst At t9 Dout = Doffset − Drst +Dsig = (Dsig − Drst) + Doffset

Doffset is a digital offset inserted after the counter reset. TheDoffset adds a data pedestal to prevent output overflow. This digitaloffset can be canceled after Back Light Compensation (BLC) operation ofthe sensor such that the final output is Dsig−Drst, which is the correctequation for CDS.

The above timing and derivation is based on the up-countingconfiguration. When the counter is set in a down-counting configuration,the timing is different in terms of the sequence of two inversionoperations. FIG. 35 illustrates a timing diagram for digital CDS withdown counting according to one embodiment of the invention. As shown inFIG. 35, one inversion operation happens after the reset phase. Anotherinversion operation takes place after the signal phase. The followingset of equations can be used to prove the validity the CDS operationillustrated in FIG. 35:

Timing Dout At t5 Dout = Doffset − Drst At t6 (first inverse) Dout =2^(n) − 1 − Doffset + Drst At t8 Dout = 2^(n) − 1 − Doffset + Drst −Dsig At t9 (second Dout = 2^(n) − 1 − (2^(n) − 1 − Doffset + Drst −Dsig) = inverse) (Dsig − Drst) + Doffset

As shown above, the final output is in same form as in the up-countingcase. As a result, it is proved that the digital CDS is performed atthis counter level for both up-counting and down-counting embodiments.Since all the offset of the previous stages (i.e., pixel, columnamplification and comparator) as well as comparator delay error areincluded in both Dsig and Drst, the offsets may all be canceled after asubtraction is performed which leads to a very low noise at the output.

FIG. 36 illustrates a timing diagram for row summing according to oneembodiment of the invention. Row summing operation performs a sum of thepixel output of two rows to increase the SNR and sensitivity. Rowsumming operation can be achieved by using the arithmetic counter toperform the addition operation. In FIG. 36, row n and row n+2 are thetwo neighboring same color pixel rows. There is no counter reset betweenthe timing of the two rows (e.g., n and n+2) to ensure that the countercontinues to count the output from second row such that it may be addedto the first row. As shown in FIG. 36, the final output is the sum ofthe pixel output of the two rows. While the row summing of two rows isdiscussed, more than two rows row-summing can also be performed.

HDR bin is an expansion of the function of the traditional row bin whichincorporates the HDR algorithm discussed above in FIGS. 8-11. In themethod illustrated in FIG. 11, the multiplication operation by 2, 4 or 8may be implemented using the arithmetic counter illustrated in FIG. 25and a keep operation may be used to ensure the previous row's data willbe maintained after the next row read in. In other embodiments, thearithmetic counter may be expanded into other applications in which anarithmetic operation or an combination of many arithmetic operations arerequired.

Improvements on Arithmetic Counter

Other embodiments of arithmetic counters that may improve counterperformance are (1) programmable counter initial value, (2) latch typefirst counter stage, and (3) true complementary coding operations.

In the embodiment illustrated in FIG. 25, the reset or set control forcounter stages are built into the counter circuit and is used to set theinitial value or an digital offset in order to prevent data overflow.However, the initial value cannot be changed after it is programed atthe design phase.

FIG. 37 illustrates a diagram for the arithmetic counter stage withprogrammable initial value according to one embodiment of the invention.Flexibility to program the counter initial value may be desired, forexample, for counter test purposes. In FIG. 37, the initial value iswritten into the flip-flops by using shift mode. In the embodimentillustrated in FIG. 37, an additional MUX is added to switch between theinitial data or the output from the previous counter stage. Inputs DIand DIB are connected to Q and QB of the previous stage. DO is used forthe initial value input for each of the stages. Since the arithmeticcounter's shift mode is used to write in the initial value, theinitialization timing is almost the same as the shift mode as in FIG. 32except that the initial enable (init_en) signal is high during the shiftoperation. Although an additional digital MUX is added, which mayrequire four more transistors, the additional MUX may be compensatedafter the reset or set function in the J-K flip-flops is removed.Accordingly, there is no increase in gate count overall.

FIG. 38 illustrates a diagram for a latch type first stage schematicaccording to one embodiment of the invention. In FIG. 38, the J-Kflip-flop is replaced by a gated latch. This embodiment allows for thecounter clock to be used as the LSB of the final output. Thus, a latchis used to store the data instead of a J-K flip-flop which may doublethe data frequency. In this embodiment, the latch unit only latches datafrom the input when gate signal is high. Similarly to the other stages,the shift function as well as the shift for initialize function is builtinto the first stage. The adding of inverse operation requires anadditional latch which will output an inverse code of its previousstates, when inversion enable (inv_en) signal is high. The inv_en signalcan be derived from mode and shift enable (shift_en) signals.

In the counter mode, count_clk signal is connected to the data input ofthe latch and comp_in is connected to the gate input of the latch toensure the alignment of the counter clock to the comp_in signal. FIG. 39illustrates a timing diagram for a counter with a latch type first stageaccording to one embodiment of the invention. As shown in FIG. 39, thedata rate is increased by 2 times, which is the same frequency of thecounter clock.

However, in the up-counting case, the count_clk is always “0” right atthe starting point of counting the signal level which may cause one biterror depending on the previous counting result on the reset level. Forexample, if the LSB is “1” after counting the reset level, when statingthe signal counting, the counter process will see one (in this case,negative) edge more than the case with LSB equal “0” after the resetlevel, which generates one LSB error at the output. In order to avoidthat, the first stage latch may be modified as illustrated in FIG. 40.

FIG. 40 illustrates a diagram for a modified latch type first stage withLSB compensation according to one embodiment of the invention. In thismodification, the same latch is used as in the previous configuration ofFIG. 39 to remember the LSB from the previous counting result. Dependingon the “1” or “0” state, the input count_clk will be inverted or willnot be inverted, respectively, to compensate for the one LSB error,discussed above. For example, if the LSB is “1” after counting the resetlevel, the counter clk will be inverted, such that when the signal levelcounting starts, the counter process will see one less negative edge.

FIG. 41 illustrates a diagram for a modified latch type first stage withtrue complementary coding according to one embodiment of the invention.The inverse operation on the code may have some limitations when used ina more complex operation. The term 2^(n)−1 added after the inverseoperation may cause trouble with multiplication operations. Accordingly,a true complementary coding instead of inverse coding may be required.

In order to achieve a complementary coding, a modification added to thefirst stage the embodiment in FIG. 40 is needed. This modification isshown in FIG. 41. Specifically, in this embodiment, the input connectionof MUX (circled in FIG. 41) is reversed. As a result, the next countingprocess will see one more negative edge for both “0” or “1” cases. Thus,the minus 1 terms (i.e., −1) in the 2^(n)−1 equations are compensatedwhich leads to a true complementary coding.

In some embodiments, if only addition and subtraction operations arerequired in the design, the arithmetic counter stage may be simplifiedto reduce the silicon area required. FIG. 42 illustrates a diagram forsimplified counter stage according to one embodiment of the invention.In the simplified version of one counter stage shown in FIG. 42, theshift and initialization function are removed. Furthermore, the reset orset function of J-K flip-flops can be achieved by setting Toggle andKeep signal to a specific value as shown in the truth table above (Table1). Accordingly, the reset/set circuit inside the J-K flip-flops may bereduced as well. However, it is noted that this embodiment of thesimplified counter stage may lose the programmability of the counterinitial value.

The processes explained above are described in terms of computersoftware and hardware. The techniques described may constitutemachine-executable instructions embodied within a machine (e.g.,computer) readable storage medium, that when executed by a machine willcause the machine to perform the operations described. Additionally, theprocesses may be embodied within hardware, such as an applicationspecific integrated circuit (“ASIC”) or the like.

A machine-readable storage medium includes any mechanism that provides(i.e., stores) information in a form accessible by a machine (e.g., acomputer, network device, personal digital assistant, manufacturingtool, any device with a set of one or more processors, etc.). Forexample, a machine-readable storage medium includesrecordable/non-recordable media (e.g., read only memory (ROM), randomaccess memory (RAM), magnetic disk storage media, optical storage media,flash memory devices, etc.).

The above description of illustrated embodiments of the invention,including what is described in the Abstract, is not intended to beexhaustive or to limit the invention to the precise forms disclosed.While specific embodiments of, and examples for, the invention aredescribed herein for illustrative purposes, various modifications arepossible within the scope of the invention, as those skilled in therelevant art will recognize.

These modifications can be made to the invention in light of the abovedetailed description. The terms used in the following claims should notbe construed to limit the invention to the specific embodimentsdisclosed in the specification. Rather, the scope of the invention is tobe determined entirely by the following claims, which are to beconstrued in accordance with established doctrines of claiminterpretation.

1. A method of operating an image sensor, comprising: acquiring imagedata within a color pixel array; and concurrently reading out image datafrom a first set of multiple rows in the color pixel array, whereinconcurrently reading out the image data from the first set of multiplerows includes: concurrently selecting a first portion of the image datafrom the first set by first readout circuitry and a second portion ofthe image data from the first set by second readout circuitry, whereinthe first and second portions of the image data from the first set aredifferent, and wherein the first and second readout circuitries aredifferent.
 2. The method of claim 1, wherein the color pixel arrayincludes red, green, and blue color pixels.
 3. The method of claim 1,wherein the color pixel array includes cyan, magenta, and yellow pixels.4. The method of claim 1, wherein the first portion of the image datafrom the first set comprises blue and red pixels from the first set andthe second portion of the image data from the first set comprises greenpixels from the first set.
 5. The method of claim 1, further comprising:serially transferring the first portion of the image data to a functioncircuitry by the first readout circuitry; and serially transporting thesecond portion of the image to the function circuitry by the secondreadout circuitry.
 6. The method of claim 5, further comprising:determining whether a second set of multiple rows exists in the colorpixel array to be readout; and if the second set of multiple rowsexists, concurrently reading out image data from the second set ofmultiple rows.
 7. The method of claim 6, wherein concurrently readingout the image data from the second set of multiple rows includes:concurrently selecting a first portion of the image data from the secondset by the first readout circuitry and a second portion of the imagedata from the second set by the second readout circuitry, wherein thefirst and second portions of the image data from the second set aredifferent
 8. The method of claim 7, wherein the first portion of theimage data from the second set comprises blue and red pixels from thesecond set and the second portion of the image data from the second setcomprises green pixels from the second set.
 9. The method of claim 1,wherein the image sensor comprises a complementary metal-oxidesemiconductor (“CMOS”) image sensor.
 10. An imaging system comprising: acolor pixel array for acquiring image data, the pixel array including aplurality of rows and columns; first readout circuitry and secondreadout circuitry coupled to the color pixel array to concurrentlyreadout a first portion of the image data from a first set of multiplerows in the color pixel array and a second portion of the image datafrom the first set of multiple rows in the color pixel array,respectively, wherein the first and second portions of the image datafrom the first set are different.
 11. The imaging system of claim 10,wherein each of the first and second readout circuitries comprise:multiplexing (MUX) circuitry coupled to the pixel array for selectingthe image data to be readout from the pixel array, wherein the MUXcircuitry of the first readout circuitry selects the first portion ofthe image data and the MUX circuitry of the second readout circuitryselects the second portion of the image data.
 12. The imaging system ofclaim 11, wherein each of the first and second readout circuitriescomprise: a plurality of amplifiers coupled to the MUX circuitry,wherein the plurality of amplifiers in the first readout circuitryamplify the first portion of the image data and the plurality ofamplifiers in the second readout circuitry amplify the second portion ofthe image data; a plurality of analog-to-digital converters (ADCs)coupled to the plurality of amplifiers, the plurality of ADCs in thefirst readout circuitry to convert the amplified first portion of theimage data and the plurality of ADCs in the second readout circuitry toconvert the amplified second portion of the image data; a plurality ofmemory cells coupled to the output of the plurality of ADCs to store theconverted image data, wherein the plurality of memory cells in the firstreadout circuitry stores the amplified first portion of the image dataand the plurality of memory cells in the second readout circuitry storesthe amplified second portion of the image data; and a global amplifiercoupled to the plurality of memory cells to amplify the image datastored in the plurality of memory cells.
 13. The imaging system of claim10, further comprising: a function logic to receive the first and secondportion of the image data being transferred from the first and secondreadout circuitries.
 14. The imaging system of claim 10, furthercomprising: control circuitry coupled the pixel array to controloperation of the pixel array and the MUX circuitries, the controlcircuitry including logic to output set (RS), reset (RST) and transfer(TX) signals to the pixel array.
 15. The imaging system of claim 10,wherein the first readout circuitry and the second readout circuitryconcurrently readout a first portion of the image data from a second setof multiple rows in the color pixel array and a second portion of theimage data from the second set of multiple rows in the color pixelarray, respectively.
 16. The imaging system of claim 10, wherein thepixel array comprises a complementary metal-oxide semiconductor (“CMOS”)image sensor array.
 17. The imaging system of claim 10, wherein theplurality of imaging pixels are backside illuminated imaging pixels. 18.The imaging system of claim 10, wherein the pixel array includes red,green, and blue pixels.
 19. The imaging system of claim 10, wherein thepixel array includes cyan, magenta, and yellow pixels.
 20. The imagingsystem of claim 10 wherein each pixel in the pixel array includestransistor pixel circuitry that comprises: a transfer transistor coupledbetween the photodiode region and a floating diffusion; a resettransistor coupled to reset charge accumulated in the photodiode region;and a select transistor to couple an output of the pixel circuitry to areadout column line.